Precise control of dry etching for nanometer scale air-hole arrays in two-dimensional GaAs/AlGaAs photonic crystal slabs

Optics Communications

Volumn 275, Issue 1, 2007, Pages 257-267

  Ikeda, Naoki ^a,b   Sugimoto, Yoshimasa ^a,b   Watanabe, Yoshinori ^a   Ozaki, Nobuhiko ^a   Takata, Yoshiaki ^a   Tanaka, Yu ^c   Inoue, Kuon ^d   Asakawa, Kiyoshi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

^d CHITOSE INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; LIGHT TRANSMISSION; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; VOLTAGE CONTROL;

AIR-HOLE PATTERNS; REACTIVE-ION-BEAM-ETCHING (RIBE); TRANSMISSION SPECTRA; VERTICAL SIDEWALLS;

PHOTONIC CRYSTALS;

EID: 34248207175     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optcom.2007.03.036     Document Type: Article

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