Direct correlation between a highly damped modulation response and ultra low relative intensity noise in an InAs/GaAs quantum dot laser

Optics Express

Volumn 15, Issue 9, 2007, Pages 5388-5393

  Capua, A ^a   Rozenfeld, L ^a   Mikhelashvili, V ^a   Eisenstein, G ^a   Kuntz, M ^b   Laemmlin, M ^b   Bimberg, D ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; DAMPING; LIGHT MODULATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

DAMPED MODULATION; NONLINEAR GAIN COMPRESSION; QUANTUM DOT LASERS; RELATIVE INTENSITY NOISE (RIN);

SEMICONDUCTOR LASERS;

EID: 34247886124     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.15.005388     Document Type: Article

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