Lamellar crystallization of silicon for 3-dimensional integration

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 1186-1189

  Witte, D J ^a   Crnogorac, F ^a   Pickard, D S ^a   Mehta, A ^b   Liu, Z ^b   Rajendran, B ^a   Pianetta, P ^b   Pease, R F W ^a  

^a Stanford University   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

3 dimensional integration; Laser crystallization; Rapid thermal processing; Silicon

Indexed keywords

CRYSTALLIZATION; INTEGRATION; LASER PULSES; RAPID THERMAL PROCESSING; SEMICONDUCTOR DEVICES; THREE DIMENSIONAL;

3-DIMENSIONAL INTEGRATION; LASER CRYSTALLIZATION;

AMORPHOUS SILICON;

EID: 34247619381     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.249     Document Type: Article

References (6)

1. Joyner J.W., Venkatesan R., Zarkesh-Ha P., Davis J.A., and Meindl J.D. IEEE Trans. VLSI Sys. 9 (2001) 922
2. Herrick K.J., Yook J.G., and Katehi L.P.B. IEEE Trans. Microwave Theory Techniq. 46 (1998) 1832
3. Hawkins W.G., and Biegelsen D.K. Appl. Phys. Lett. 42 (1983) 358
4. B. Rajendran, R. Shenoy, D.J. Witte, N.S. Chokshi, R.L. DeLeon, G.S. Tompa, R.F.W. Pease, in: Proc. VLSI Multilevel Interconnection Conf., 2005.
5. Banerjee K., Souri S.J., Kapur P., and Saraswat K.C. Proc. IEEE 89 (2001) 602
6. Giessibl F.J., Hembacher S., Bielefeldt H., and Mannhart J. Science 289 (2000) 422