Surface potential imaging in oxide-nitride-oxide-silicon structure using a field effect transistor cantilever

Sensors and Actuators, A: Physical

Volumn 136, Issue 2, 2007, Pages 597-603

  Suh, M S ^a   Lee, C S ^a   Kim, S H ^a   Lee, K I ^a   Cho, J W ^a   Kuk, Y ^b   Shin, J K ^a  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

AFM; Cantilever; Charge sensing; Field effect transistor (FET)

Indexed keywords

ATOMIC FORCE MICROSCOPY; FIELD EFFECT TRANSISTORS; IMAGING SYSTEMS; SILICA; SILICON NITRIDE; THERMAL EFFECTS;

CANTILEVERS; CHARGE SENSING; RETENTION TIME;

SURFACE POTENTIAL;

EID: 34247574176     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2007.01.005     Document Type: Article

References (19)

1. Eigler D.M., and Shweizer E.K. Nature 344 (1990) 524
2. Hosaka S., Hosaki S., and Hasegawa T. Appl. Surf. Sci. 60/61 (1992) 643
3. Mamin H.J., and Rugar D. Appl. Phys. Lett. 61 (1992) 1003
4. Mamin H.J., Guethner P.H., and Rugar D. Phys. Rev. Lett. 65 (1995) 4932
5. Kado H., and Toda T. Appl. Phys. Lett. 66 (1995) 2961
6. Fukano Y., Uchihashi T., Okusako T., Chayahara A., Sugawara Y., Yamaishi Y., Oasa T., and Morita S. Jpn. J. Appl. Phys. 33B (1994) 379
7. Fukano Y., Hontani K., Uchihashi T., Okusako T., Chayahara A., Sugawara Y., Yamanishi Y., Oasa T., and Morita S. Jpn. J. Appl. Phys. 33 (1994) 3756
8. Uchihashi T., Okusako T., Sugawara Y., Yamanishi Y., Oasa T., and Morita S. Jpn. Appl. Phys. 33 (1994) L1128
9. Fukano Y., Uchihashi T., Okusako T., Chayahara A., Sugawara Y., Yamaishi Y., Oasa T., and Morita S. J. Appl. Phys. 33 (1994) 6739
10. Uchihashi T., Okusako T., Sugawara Y., Yamanishi Y., Oasa T., and Morita S. J. Appl. Phys. 79 (1996) 4174
11. Barrett R.C., and Quate C.F. J. Appl. Phys. 70 (1991) 2725
12. Barrett R.C., and Quate C.F. Ultramicroscopy 42 (1992) 262
13. Terris B.D., and Barrett R.C. IEEE Trans. Electron Devices ED-42 (1995) 944
14. Okusako T., Uchihashi T., Nakano A., Ida T., Sugawara Y., and Morita S. Jpn. J. Appl. Phys. 33 (1994) L959
15. Dreyer M., and Wiesendanger R. J. Appl. Phys. A61 (1995) 357
16. Fujiwara I., Kojima S., and Seto J. Jpn. J. Appl. Phys. 35 (1996) 2764
17. Suh M.S., Choi J.H., Kuk Y., and Jung J. Appl. Phys. Lett. 83 (2003) 386
18. Suh M.S., Lee C.S., Kim S.H., Lee K.I., Cho J.W., Choi Y.J., and Shin J.K. Curr. Appl. Phys. 6S1 (2006) e224
19. M.S. Suh, Y. Kuk, Korean Patent No. 2003-0041726, 2003.