Effect of free-carrier absorption on performance of 808 nm AlGaAs-based high-power laser diodes

Semiconductor Science and Technology

Volumn 22, Issue 5, 2007, Pages 502-510

  Bulashevich, K A ^a,b   Mymrin, V F ^b   Karpov, S Yu ^b,c   Demidov, D M ^d   Ter Martirosyan, A L ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b SOFT IMPACT LTD   (Russian Federation)

^c STR Inc   (United States)

^d JSC 'Atc Semiconductor Devices'   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRON MOBILITY; HOLE MOBILITY; LIGHT EMISSION; OPTICAL LOSSES; SEMICONDUCTING ALUMINUM COMPOUNDS;

FREE CARRIER ABSORPTION; HIGH POWER LASER DIODES;

SEMICONDUCTOR LASERS;

EID: 34247499885     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/5/008     Document Type: Article

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