Effects of porosity on ferroelectric properties of Pb(Zr0.2Ti0.8)O3 films

Thin Solid Films

Volumn 515, Issue 16 SPEC. ISS., 2007, Pages 6557-6561

  Stancu, V ^b   Lisca, M ^b   Boerasu, I ^c   Pintilie, L ^a   Kosec, M ^c  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^c JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

Ferroelectric; Porous thin films; PVP; PZT

Indexed keywords

ATOMIC FORCE MICROSCOPY; FERROELECTRICITY; LEAD COMPOUNDS; PIEZOELECTRICITY; POROUS MATERIALS; SILICON WAFERS; SOL-GEL PROCESS;

POROUS THIN FILMS; PVP; REMNANT POLARIZATION;

THIN FILMS;

EID: 34247471593     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.165     Document Type: Article

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