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Volumn , Issue , 2005, Pages 335-338

A 5.4-mW LNA using 0.35-μm SiGe BiCMOS technology for 3.1-10.6-GHz UWB wireless receivers

Author keywords

LNA; Low power; RFIC; SiGe BiCMOS; Silicon; UWB

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POWER UTILIZATION; RADIO SYSTEMS; SPURIOUS SIGNAL NOISE;

EID: 27644577983     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (24)

References (16)
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  • 2
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  • 4
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    • Shaffer, D.K.1    Lee, T.2
  • 7
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    • A low-cost-packaged 4.9-6 GHz LNA for WLAN application
    • June
    • E. Imbs, I. Telliez, S. Detout, and Y. Imbs, "A low-cost-packaged 4.9-6 GHz LNA for WLAN application," in IEEE MTT-S Dig., vol. 3, pp. 1569-1572, June 2003.
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    • Imbs, E.1    Telliez, I.2    Detout, S.3    Imbs, Y.4
  • 10
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  • 14
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    • Low noise, high linearity, wide bandwidth amplifier using a 0.35μm SiGe BiCMOS for WLAN applications
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    • J. Sadowy et al., "Low noise, high linearity, wide bandwidth amplifier using a 0.35μm SiGe BiCMOS for WLAN applications," in IEEE Radio Frequency Integrated Circuits (RFIC) Symp., pp. 217-220, June 2002.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.