Analysis of strained-Si device including quantum effect

Journal of Computational Electronics

Volumn 3, Issue 3-4, 2004, Pages 387-391

  Tanabe, Ryo ^a   Yamasaki, Takahiro ^a   Ashizawa, Yoshio ^a   Oka, Hideki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Ballistic transport; Bohm potential; Monte Carlo; Quantum effect; Strained Si

Indexed keywords

EID: 24944480914     PISSN: 15698025     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10825-004-7082-5     Document Type: Article

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