Tight-binding calculations of Ge-nanowire bandstructures

Journal of Computational Electronics

Volumn 6, Issue 1-3, 2007, Pages 341-344

  Bescond, Marc ^a   Cavassilas, Nicolas ^b   Nehari, Karim ^b   Lannoo, Michel ^b  

^a IMEP LAHC   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Band gap; Bandstructures; Effective masses; Germanium; Nanowire; Silicon; Tight binding

Indexed keywords

ELECTRON TUNNELING; ENERGY GAP; MATHEMATICAL MODELS; NANOELECTRONICS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

BANDSTRUCTURES; EFFECTIVE MASSES; TIGHT-BINDING;

NANOWIRES;

EID: 34247357377     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-006-0137-z     Document Type: Article

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