A 1.2 v reactive-feedback 3.1-10.6 GHz low-noise amplifier in 0.13 μm CMOS

IEEE Journal of Solid-State Circuits

Volumn 42, Issue 5, 2007, Pages 1023-1032

  Reiha, Michael T ^a,b   Long, John R ^a,b  

^a IEEE   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Bias current reuse; Broadband amplifier; Low noise amplifier; Monolithic transformer; Reactive feedback; Ultrawideband

Indexed keywords

MONOLITHIC TRANSFORMER; REACTIVE FEEDBACK; ULTRAWIDEBAND;

BANDWIDTH; BIAS CURRENTS; BROADBAND AMPLIFIERS; CMOS INTEGRATED CIRCUITS; FEEDBACK; GAIN CONTROL; SPURIOUS SIGNAL NOISE;

LOW NOISE AMPLIFIERS;

EID: 34247336859     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2007.894329     Document Type: Conference Paper

References (17)

1. R. Aiello et al., "Multi-Band OFDM Physical Layer Proposal Update," IEEE 802.15-03/449r2-TG3a, Nov. 2003.
2. R. Fischer et al., "Merger #2 Proposal DS-CDMA," IEEE 802.15-03/334r5-TG3a, Nov. 2003.
3. J.-H. C. Zhan and S. S. Taylor, "A 5 GHz resistive-feedback CMOS LNA for low-cost multi-standard applications," in IEEE ISSCC Dig. Tech. Papers, 2006, pp. 200-201.
4. A. Bevilacqua and A. M. Niknejad, "An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers," IEEE J. Solid-State Circuits, vol. 39, no. 12, pp. 2259-2268, Dec. 2004.
5. A. Ismail and A. A. Abidi, "A 3-10-GHz low-noise amplifier with wideband LC-ladder matching network," IEEE J. Solid-State Circuits, vol. 39, no. 12, pp. 2269-2277, Dec. 2004.
6. F. Lee and A. Chandrakasan, "A BiCMOS ultra-wideband 3.1-10.6-GHz front-end," IEEE J. Solid-State Circuits, vol. 48, no. 8, pp. 1784-1790, Aug. 2006.
7. Y. Lu, R. Krithivasan, W.-M. L. Kuo, and J. D. Cressler, "A 1.8-3.1 dB noise figure (3-10 GHz) SiGe HBT LNA for UWB applications," in Proc. IEEE RFIC Symp., San Francisco, CA, 2006, pp. 59-62.
8. D. Cassan and J. R. Long, "A 1 V transformer-feedback low noise amplifier for 5-6 GHz WLAN in 0.18 μm CMOS," IEEE J. Solid-State Circuits, vol. 38, no. 3, pp. 427-435, Mar. 2003.
9. M. T. Reiha, J. R. Long, and J. J. Pekarik, "A 1.2 V reactive-feedback 3.1-10.6 GHz ultrawideband low-noise amplifier in 0.13 μm CMOS," in Proc. IEEE RFIC Symp., San Francisco, CA, 2006, pp. 41-44.
10. H. W. Bode, Network Analysis and Feedback Amplifier Design. New York: Van Nostrand, 1945.
11. E. H. Nordholt, Design of High-Performance Negative-Feedback Amplifiers. Amsterdam, The Netherlands: Elsevier, 1983.
12. E. M. Cherry and D. E. Hooper, Amplifying Devices and Low-Pass Amplifier Design. New York: Wiley, 1968.
13. F. Bonn, "A low current high performance LNA for global positioning receiver applications," in Proc. IEEE MTT-S Symp. Technologies for Wireless Applications, Vancouver, BC, Canada, Feb. 1995, pp. 113-115.
14. J. R. Long, "Monolithic transformers for silicon RF IC design," IEEE J. Solid-State Circuits, vol. 35, no. 9, pp. 1368-1382, Sep. 2000.
15. T. S. D. Cheung and J. R. Long, "Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits," IEEE J. Solid-State Circuits, vol. 41, no. 5, pp. 1183-1200, May 2006.
16. "Foundry technologies 130-nm CMOS and RF CMOS," IBM Corp., IBM Product Brief, 2003.
17. D. Linten, S. Thijs, M. I. Natarajan, P. Wambacq, W. Jeamsaksiri, J. Ramos, A. Mercha, S. Jenei, S. Donnay, and S. Decoutere, "A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS," IEEE J. Solid-State Circuits, vol. 40, no. 7, pp. 1434-1442, Jul. 2005.