A 1.8-3.1 dB noise figure (3-10 GHz) SiGe HBT LNA for UWB applications

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn 2006, Issue , 2006, Pages 45-48

  Lu, Yuan ^a   Krithivasan, Ramkumar ^a   Kuo, Wei Min Lance ^a   Cressler, John D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITORS; HETEROJUNCTION BIPOLAR TRANSISTORS; NATURAL FREQUENCIES; ULTRAHIGH FREQUENCY AMPLIFIERS;

CAS-CODE AMPLIFIER; INDUCTIVE DEGENERATION; LOW-NOISE AMPLIFIER (LNA);

SILICON COMPOUNDS;

EID: 33845905260     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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