Gaseous etching effects on homoepitaxial growth of SiC on hemispherical substrates using CVD

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 123-126

  Nishirio, S ^a   Masuda, Y ^a   Ohshima, S ^a   Jacob, C ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BINDING ENERGY; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; ETCHING; GASES; MORPHOLOGY; NUCLEATION; SUBSTRATES; SURFACES;

DANGLING BOND ENERGY; EPITAXIAL LAYERS; GASEOUS ETCHING; HOMOEPITAXIAL GROWTH;

SILICON CARBIDE;

EID: 14344268794     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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