Electric field tunable electron g factor and high asymmetrical Stark effect in InAS1-xNx quantum dots

Applied Physics Letters

Volumn 90, Issue 15, 2007, Pages

  Zhang, X W ^a,b   Fan, W J ^a   Li, S S ^b   Xia, J B ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC FIELDS; INDIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

ASYMMETRY FACTORS; QUANTUM ELLIPSOIDS; STARK EFFECTS;

ELECTRONS;

EID: 34247241167     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2721130     Document Type: Article

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