Semiconductor-metal transition in InSb nanowires and nanofilms under external electric field

Applied Physics Letters

Volumn 89, Issue 17, 2006, Pages

  Zhang, X W ^b   Li, S S ^a   Xia, J B ^a  

^a CCAST WORLD LABORATORY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LEVELS; ELECTRON MOBILITY; HOLE MOBILITY; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

NANOFILMS; NANOWIRES; RASHBA COEFFICIENTS; RASHBA SPIN-ORBIT COUPLINGS;

NANOSTRUCTURED MATERIALS;

EID: 33750439420     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2370273     Document Type: Article

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