A study of low energy phosphorus implantation and annealing in Si:C epitaxial films

Semiconductor Science and Technology

Volumn 22, Issue 2, 2007, Pages 171-174

  Ye, Zhiyuan ^a   Kim, Yihwan ^a   Zojaji, Ali ^a   Sanchez, Errol ^a   Cho, Yonah ^a   Castle, Matthew ^a   Foad, Majeed A ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SILICON; X RAY DIFFRACTION;

CARBON LOSS; PHOSPHORUS DIFFUSED LAYERS; PHOSPHORUS IMPLANTATION; SPIKE ANNEALING;

EPITAXIAL FILMS;

EID: 34247214615     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/2/030     Document Type: Article

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