Theoretical studies on the reaction mechanism of AsCl3 with H2 in the vapor phase epitaxy of GaAs

Jiegou Huaxue

Volumn 26, Issue 3, 2007, Pages 267-272

  Ma, Lin ^a   Guan, Wen Jia ^a,b   Xu, Chang Zhi ^a   Sun, Ren An ^a  

^a LIAONING NORMAL UNIVERSITY   (China)

^b SUN YAT SEN UNIVERSITY   (China)

Author keywords

AsCl3 H2; DFT; Transition state

Indexed keywords

EID: 34147166568     PISSN: 02545861     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. Jiang, R. H.; Xiao, S. Z. Journal of Materials Science and Technology 2003, 7, 11-17.
2. Sun, R. A.; Li, N.; Ai, C. Z.; Zhang, H. Chinese J. Struct. Chem. 2006, 25, 491-496.
3. Li, J. Z. The Principle of Semiconductor Chemistry 1980, 135-138.
4. Nagindar, K.; Singh, R. K. Surface Science 1999, 442, 442-454.
5. Guyaux, J. L.; Ortion, J. M.; Cordie, Y.; Kappers, M.; Chirlias, E. J. Journal of Crystal Growth 1999, 201/202, 614-618.
6. Ortion, J. M.; Cordier, Y.; Garcia, J. C.; Grattepain, C. Journal of Crystal Growth 1996, 164, 97-103.
7. Imaizumi, T.; Seiwa, M.: Oda, O. Journal of Crystal Growth 1991, 115, 443-447.
8. Yoshida, M.; Terao, H.; Watanabe, H. Journal of Crystal Growth 1986, 76, 142-151.
9. Clotct, A.; Rubio, J.; lllas, F. Journal of Molecular Structure (Theochem.) 1988, 164, 351-361.
10. Igor, N. Inorganica Chimica Acta 1991, 186, 131-134.