Kinetics of AsCl3 chemical beam etching of GaAs(0 0 1), (1 1 1)A and (1 1 1)B surfaces

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 614-618

  Guyaux, J L ^a   Ortion, J M ^a   Cordier, Y ^b   Kappers, M ^a   Chirlias, E ^a   Garcia, J Ch ^a  

^a THALES   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CONCENTRATION (PROCESS); CRYSTAL ORIENTATION; ETCHING; MASKS; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THERMAL EFFECTS;

MISORIENTED SURFACES; SELECTIVE AREA ETCHING;

CHEMICAL BEAM EPITAXY;

EID: 0032630076     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01422-5     Document Type: Article

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