Multiscale modeling of point defects in Si-Ge(001) quantum wells

Physical Review B - Condensed Matter and Materials Physics

Volumn 75, Issue 14, 2007, Pages

  Yang, B ^a   Tewary, V K ^b  

^a Florida Institute of Technology ^*  (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34147155222     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.75.144103     Document Type: Article

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