Green's function-based multiscale modeling of defects in a semi-infinite silicon substrate

International Journal of Solids and Structures

Volumn 42, Issue 16-17, 2005, Pages 4722-4737

  Yang, B ^a   Tewary, V K ^b  

^a Florida Institute of Technology ^*  (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; GERMANIUM; GREEN'S FUNCTION; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; SILICON;

LATTICE DISTORTION; MULTISCALE MODELING; SEMI-INFINITE SILICON SUBSTRATES; SILICON SUBSTRATES;

SUBSTRATES;

EID: 18144376696     PISSN: 00207683     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijsolstr.2005.01.019     Document Type: Article

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