Effect of thermal annealing on the formation of preferential c-axis orientation and an interfacial layer for ZnO thin films grown on an n-Si (001) substrate

Journal of the Korean Physical Society

Volumn 50, Issue 3, 2007, Pages 608-611

  Yuk, J M ^a   Shin, J W ^a   Lee, J Y ^a   Son, D I ^b   Jung, J H ^b   Kim, T W ^b   Kim, J Y ^c   Choi, W K ^d  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hanyang University   (South Korea)

^c Kwangwoon University   (South Korea)

^d Korea Institute of Science and Technology   (South Korea)

Author keywords

Microstructural properties; Semiconducting II VI materials; Thermal annealing effect

Indexed keywords

EID: 34147124849     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.50.608     Document Type: Article

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