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Physical Review Letters

Volumn 98, Issue 14, 2007, Pages

Resonance fluorescence in transport through quantum dots: Noise properties

(3) Sánchez, Rafael a Platero, Gloria a Brandes, Tobias b

a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID (Spain)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; ELECTRON TUNNELING; PHONONS; QUANTUM NOISE; RESONANCE; SEMICONDUCTOR QUANTUM DOTS; STATISTICS; TRANSPORT PROPERTIES;

DRIVING FIELD INTENSITY; ELECTRONIC TUNNELING; PHONON BATHS; RESONANCE FLUORESCENCE;

FLUORESCENCE;

EID: 34147101655 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.98.146805 Document Type: Article

Times cited : (58)

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