Full counting statistics for a single-electron transistor: Nonequilibrium effects at intermediate conductance

Physical Review Letters

Volumn 96, Issue 8, 2006, Pages

  Utsumi, Yasuhiro ^a,b   Golubev, Dmitri S ^a,c,d   Schön, Gerd ^a,d  

^a UNIVERSITY OF KARLSRUHE   (Germany)

^b RIKEN   (Japan)

^c LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^d KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

NONEQUILIBRIUM EFFECTS; SCHWINGER-KELDYSH APPROACH; SINGLE-ELECTRON TRANSISTOR;

ELECTRIC CONDUCTANCE; ELECTRON ENERGY LEVELS; FERMIONS;

ELECTRON TRANSITIONS;

EID: 33644509223     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.96.086803     Document Type: Article

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