In situ study of the initial stages of diamond deposition on 3C-SiC (100) surfaces: Towards the mechanisms of diamond nucleation

Diamond and Related Materials

Volumn 16, Issue 4-7 SPEC. ISS., 2007, Pages 690-694

  Arnault, J C ^a   Saada, S ^b   Delclos, S ^b   Intiso, L ^a   Tranchant, N ^b   Polini, R ^c   Bergonzo, Ph ^b  

^a CEA SACLAY   (France)

^b CEA LIST   (France)

^c UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

Diamond crystal; Nucleation; Silicon carbide; Surface characterisation

Indexed keywords

DEPOSITION; NUCLEATION; PLASMAS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

DIAMOND NUCLEATION; NEGATIVE BIAS; SURFACE CHARACTERIZATION;

DIAMONDS;

EID: 34047270240     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.12.036     Document Type: Article

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