Area-selective growth of aligned single-walled carbon nanotube films using microwave plasma-enhanced CVD

Diamond and Related Materials

Volumn 16, Issue 4-7 SPEC. ISS., 2007, Pages 1126-1130

  Hiramatsu, Mineo ^a   Deguchi, Takahiro ^a   Nagao, Hidetoshi ^a   Hori, Masaru ^b  

^a MEIJO UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Aligned; Carbon nanotube; Catalyst preparation; Plasma enhanced CVD; Single walled CNT

Indexed keywords

CATALYSTS; CRYSTAL GROWTH; ELECTRODES; NANOCRYSTALLINE SILICON; NANOPARTICLES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICIDES;

ARC PLASMA DEPOSITION; MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 34047246498     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.11.070     Document Type: Article

References (23)

1. Rinzler A.G., Hafner J.H., Nikolaev P., Lou L., Kim S.G., Tomanek D., Nordlander P., Cobert D.T., and Smalley R.E. Science 269 (1995) 1550
2. Dillon A.C., Jones K.M., Bekkedahl T.A., Kiang C.H., Bethune D.S., and Heben M.J. Nature 386 (1997) 377
3. Che G., Lakshmi B.B., Fisher E.R., and Martin C.R. Nature 393 (1998) 346
4. de Heer W.A., Chatelain A., and Ugarte D. Science 270 (1995) 1179
5. Nihei M., Kawabata A., and Awano Y. Jpn. J. Appl. Phys. 42 (2003) L721
6. Li W., Xie S., Qian L., and Chang B. Science 274 (1996) 1701
7. Ren Z.F., Huang Z.P., Xu J.W., Wang J.H., Bush P., Siegal M.P., and Provencio P.N. Science 282 (1998) 1105
8. Fan S., Chapline M.G., Franklin N.R., Tombler T.W., Cassell A.M., and Dai H. Science 283 (1999) 512
9. Bower C., Zhu W., Jin S., and Zhou O. Appl. Phys. Lett. 77 (2000) 830
10. Hata K., Futaba D.H., Nizuno K., Namai T., Yumura M., and Iijima S. Science 306 (2004) 1362
11. Zhang G., Mann D., Zhang L., Javey A., Li Y., Yenilmez E., Wang Q., James, McVittie P., Nishi Y., Gibbons J., and Dai H. Proc. Natl. Acad. Sci. U. S. A. 102 (2005) 16141
12. Lee S.B., Teh A.S., Teo K.B.K., Chhowalla M., Hasko D.G., Milne W.I., Amaratunga G.A.J., and Ahmed H. Nanotechnology 14 (2003) 192
13. Kim U., Pcionek R., Aslam D.M., and Tomanek D. Diamond Relat. Mater. 10 (2001) 1947
14. Hong W.K., Chen K.H., Chen L.C., Tarntair F.G., Chen K.J., Lin J.B., and Cheng H.C. Jpn. J. Appl. Phys. 40 (2001) 3468
15. Sugai T., Yoshida H., Shimada T., Okazaki T., Bandow S., and Shinohara H. Nano Lett. 3 (2003) 769
16. Sugai T., Okazaki T., Yoshida1 H., and Shinohara H. New J. Phys. 6 (2004) 21
17. Murakami Y., Chiashi S., Miyauchi Y., Hu M., Ogura M., Okubo T., and Maruyama S. Chem. Phys. Lett. 385 (2004) 298
18. Zhong G., Iwasaki T., Honda K., Furukawa Y., Ohdomari I., and Kawarada H. Jpn. J. Appl. Phys. 44 (2004) 1558
19. Hiramatsu M., Taniguchi M., Nagao H., Ando Y., and Hori M. Jpn. J. Appl. Phys. 44 (2005) 1150
20. Hiramatsu M., Nagao H., Taniguchi M., Amano H., Ando Y., and Hori M. Jpn. J. Appl. Phys. 44 Pt2 (2005) L693
21. K. Yamamoto, (private communication).
22. Alvarez L., Righi A., Guillard T., Rols S., Anglaret E., Laplaze D., and Sauvajol J.-L. Chem. Phys. Lett. 316 (2000) 186
23. M. Hiramatsu, T. Deguchi, H. Nagao, M. Hori, Jpn. J. Appl. Phys. (in press).