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Volumn 2006, Issue , 2006, Pages 7-13

Dynamic data stability in sram cells and its implications on data stability tests

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DATA REDUCTION; DYNAMIC PROGRAMMING; FAULT TOLERANT COMPUTER SYSTEMS; SET THEORY;

EID: 34047234996     PISSN: 10874852     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MTDT.2006.12     Document Type: Conference Paper
Times cited : (7)

References (13)
  • 1
  • 2
    • 0017980692 scopus 로고
    • Static and dynamic noise margins of logic circuits
    • J. Lohstroh, "Static and dynamic noise margins of logic circuits," IEEE J. Solid-State Circuits, vol. SC-14, pp. 591-598, 1979.
    • (1979) IEEE J. Solid-State Circuits , vol.SC-14 , pp. 591-598
    • Lohstroh, J.1
  • 3
    • 7244226233 scopus 로고    scopus 로고
    • An industrial evaluation of DRAM tests
    • Sep-Oct Pages
    • Van de Goor, "An industrial evaluation of DRAM tests", IEEE Design & Test of Computers, Volume 21, Issue 5, Sep-Oct 2004 Page(s):430-440, 2004.
    • (2004) IEEE Design & Test of Computers , vol.21 , Issue.5 , pp. 430-440
    • de Goor, V.1
  • 6
    • 25144443976 scopus 로고    scopus 로고
    • Estimation of delay variations due to random-dopant fluctuations in nanoscale CMOS circuits
    • Sept
    • Mahmoodi, H., Mukhopadhyay, S., Roy, K., "Estimation of delay variations due to random-dopant fluctuations in nanoscale CMOS circuits", IEEE Journal of Solid-State Circuits, Volume 40, Issue 9, pp. 1787-1796, Sept. 2005.
    • (2005) IEEE Journal of Solid-State Circuits , vol.40 , Issue.9 , pp. 1787-1796
    • Mahmoodi, H.1    Mukhopadhyay, S.2    Roy, K.3
  • 8
    • 0020906578 scopus 로고
    • Worst-case static noise margin criteria for logic circuits and their mathematical equivalence
    • J. Lohstroh, E. Seevinck, and J. D. Groot, "Worst-case static noise margin criteria for logic circuits and their mathematical equivalence," IEEE J. Solid-State Circuits, vol. SC-18,pp. 803-807, 1983.
    • (1983) IEEE J. Solid-State Circuits , vol.SC-18 , pp. 803-807
    • Lohstroh, J.1    Seevinck, E.2    Groot, J.D.3
  • 9
  • 10
    • 0035308547 scopus 로고    scopus 로고
    • The impact of intrinsic device fluctuations on CMOS SRAM cell stability
    • A. Bhavnagarwala, X. Tang, and J. Meindl, "The impact of intrinsic device fluctuations on CMOS SRAM cell stability," IEEE J. Solid-State Circuits, vol. 36, pp. 657-665, 2001.
    • (2001) IEEE J. Solid-State Circuits , vol.36 , pp. 657-665
    • Bhavnagarwala, A.1    Tang, X.2    Meindl, J.3
  • 12
    • 0026954381 scopus 로고
    • A 15-ns 16-mb CMOS SRAM with interdigitated bit-line architecture
    • M. Matsumiya et al., "A 15-ns 16-mb CMOS SRAM with interdigitated bit-line architecture," IEEE J. Solid-State Circuits, vol. 27, pp. 1497-1503, 1992.
    • (1992) IEEE J. Solid-State Circuits , vol.27 , pp. 1497-1503
    • Matsumiya, M.1
  • 13
    • 0026904396 scopus 로고
    • An analytical access time model for on-chip cache memories
    • T. Wada, S. Rajan, and S. Przybylski, "An analytical access time model for on-chip cache memories," IEEE J. Solid-State Circuits, vol. 27, pp. 1147-1156, 1992.
    • (1992) IEEE J. Solid-State Circuits , vol.27 , pp. 1147-1156
    • Wada, T.1    Rajan, S.2    Przybylski, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.