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Journal of Electroanalytical Chemistry

Volumn 401, Issue 1-2, 1996, Pages 57-63

Modelling of n-type CdTe photoluminescence variation with polarization: A probe of the shift of semiconductor band edges

(4) Gerard I a Iranzo Marin F a Vigneron, J a Etcheberry, A a

a CNRS (France)

Author keywords

n type CdTe; Photoluminescence

Indexed keywords

CAPACITANCE MEASUREMENT; CESIUM; CYCLIC VOLTAMMETRY; MATHEMATICAL MODELS; POLARIZATION; SEMICONDUCTING CADMIUM COMPOUNDS; TELLURIUM;

BAND SHIFT; DONOR DENSITY; ENERGETIC SURFACE BAND EDGE CONFIGURATION; FLAT BAND POTENTIAL;

PHOTOLUMINESCENCE;

EID: 0029695828 PISSN: 15726657 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0728(95)04288-1 Document Type: Article

Times cited : (8)

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