Cathodic behavior of n-InP modified by a thin anodic oxide

Journal of the Electrochemical Society

Volumn 151, Issue 5, 2004, Pages

  Quach, N C ^a   Simon, N ^a   Gerard I ^a   Van, P Tran ^a   Etcheberry, A ^a  

^a UNIVERSITÉ DE VERSAILLES SAINT QUENTIN EN YVELINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CATHODES; DECOMPOSITION; ELECTROCHEMISTRY; ELECTRODES; HYDROGEN; INTERFACES (MATERIALS); OXIDES; SEMICONDUCTOR MATERIALS; TUNGSTEN;

BLOCKING PROPERTIES; ELECTRON TRANSFER; HOLE TRANSFER; VALENCE BOND;

INDIUM COMPOUNDS;

EID: 2942537904     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1690783     Document Type: Article

References (19)

1. H. L. Hartnagel, Oxides and Oxide Films, Vol. 6, Marcel Dekker, New York and Basel (1981).
2. Y. Robach, A. Gagnaire, J. Joseph, E. Bergignat, and G. Hollinger, Thin Solid Films, 162, 81 (1988).
3. P. Louis, M. P. Besland, Y. Robach, and J. Joseph, J. Electrochem. Soc., 4, 142 (1995).
4. J. Joseph, A. Mahdjoub, and Y. Robach, Rev. Phys. Appl., 24, 189 (1989).
5. M. P. Besland, Y. Robach, and J. Joseph, J. Electrochem. Soc., 140, 104 (1993).
6. N. Simon, I. Gérard, C. Mathieu, and A. Etcheberry, Electrochim. Acta, 47/16, 2621 (2002).
7. N. Simon, I. Gérard, J. Vigneron, and A. Etcheberry, Thin Solid Films, 400, 134 (2001).
8. S. Menezes, B. Miller, and K. J. Bachmann, J. Vac. Sci. Technol. B, 1, 48 (1983).
9. A. Gagnaire, J. Joseph, A. Etcheberry, and J. Gautron, J. Electrochem. Soc., 132, 1655 (1985).
10. A. Gagnaire, J. Joseph, and A. Etcheberry, J. Electrochem. Soc., 134, 2475 (1987).
11. S. Gröger, M. Handschub, and W. Lorenz, J. Electroanal. Chem., 278, 323 (1990).
12. A. Etcheberry, B. Fofouhi, D. Ballutaud, M. L'Haridon, D. Moutonnet, and J. L. Sculfort, J. Electrochem. Soc., 138, 41 (1991).
13. J. Vigneron, M. Herlem, E. M. Khoumri, and A. Etcheberry, Appl. Surf. Sci., 9118, 1 (2002).
14. M. Seo, M. Aihara, and A. W. Hassel, J. Electrochem. Soc., 148, B400 (2001).
15. A. Etcheberry, J. Electrochem. Soc., To be submitted.
16. I. Gérard, N. Simon, J. Vigneron, C. Mathieu, and A. Etcheberry, Semicond. Sci. Technol., 16, 222 (2001).
17. N. C. Quach, I. Gérard, N. Simon, and A. Etcheberry, Phys. Status Solidi C, 3, 1033 (2003).
18. S. Preusser, M. Herlem, A. Etcheberry, and J. Jaume, Electrochim. Acta, 37, 289 (1992).
19. H. Gerischer, N. Müller, and O. Haas, J. Electroanal. Chem. Interfacial Electrochem., 119, 41 (1981).