High rate reactive ion etch and electron cyclotron resonance etching of GaAs via holes using thick polyimide and photoresist masks

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 3, 1997, Pages 657-664

  Shul, R J ^a   Lovejoy, M L ^a   Word, J C ^a   Howard, A J ^a   Rieger, D J ^a   Kravitz, S H ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002785058     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589365     Document Type: Article

References (10)

1. L. A. D'Asaro, J. L. DiLorenzo, and H. Fukui, IEEE Trans. Electron Devices ED25, 5218 (1981).
2. L. A. D'Asaro, A. D. Butherus, J. B. Lorenzo, D. E. Inglesias, and S. H. Wemple, Proceedings of GaAs and Related Materials, AIP Conf. Proc. No. 56 (AIP, New York, 1981), p. 267.
3. O. Blum, I. J. Fritz, R. J. Shul, R. P Schneider, and A. J. Howard, Electron. Lett. 30, 1885 (1994).
4. M. L. Lovejoy, R. J. Shul, C. Constantine, and D. J. Rieger, Proceedings of 1994 Conference on GaAs Manufacturing Technology (MANTECH Technical Digest), Las Vegas, NV (unpublished).
5. T. E. Kazior, B. I. Patel, and B. J. Guerin, Proceedings of the 13th State-of-the-Art Program on Compound Semiconductors (Electrochemical Society, Pennington, NJ, 1991), Vol. 91-1, p. 299.
6. S. Saliman, C. B. Cooper III, and M. E. Day, J. Vac. Sci. Technol. B 5, 1606 (1987).
7. E. Y. Chang, R. M. Nagarajan, C. J. Kryzak, and K. P. Pande, IEEE Trans. Semicond. Manuf. SM-1, 157 (1988).
8. L. G. Hipwood and P. N. Wood, J. Vac. Sci. Technol. B 3, 395 (1985).
9. A. E. Geissberger and P. R. Clayton, J. Vac. Sci. Technol. A 3, 863 (1985).
10. S. J. Pearton, F. Ren, A. Katz, J. R. Lothian, T. R. Fullowan, and B. Tseng, J. Vac. Sci. Technol. B 11, 152 (1993).