Thickness dependence of in-plane dielectric and ferroelectric properties of Ba0.7Sr0.3TiO3 thin films epitaxially grown on LaAlO3

Applied Physics Letters

Volumn 90, Issue 13, 2007, Pages

  Zhou, X Y ^b   Wang, D Y ^b   Zheng, R K ^b   Tian, H Y ^b   Qi, J Q ^b   Chan, H L W ^b   Choy, C L ^b   Wang, Y ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; DIELECTRIC PROPERTIES; EPITAXIAL GROWTH; FERROELECTRICITY; FILM THICKNESS; LANTHANUM COMPOUNDS;

IN-PLANE DIELECTRICS; LATTICE STRAIN; REMNANT POLARIZATION;

THIN FILMS;

EID: 34047120698     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2716865     Document Type: Article

References (21)

1. C. Zhou and D. M. Newns, J. Appl. Phys. 82, 3081 (1997).
2. A. K. Tagantsev, M. Landivar, E. Colla, and N. Setter, J. Appl. Phys. 78, 2623 (1995).
3. L. J. Sinnamon, R. M. Bowman, and J. M. Gregg, Appl. Phys. Lett. 78, 1724 (2001).
4. D. D. Fong, G. B. Stephenson, S. K. Streiffer, J. A. Eastman, O. Auciello, P. H. Fuoss, and C. Thompson, Science 304, 1650 (2004).
5. W. L. Zhong, Y. G. Wang, P. L. Zhang, and B. D. Qu, Phys. Rev. B 50, 698 (1994).
6. J. H. Chen, C. L. Lia, K. Urban, and C. L. Chen, Appl. Phys. Lett. 81, 1291 (2002).
7. K. J. Choi, M. Biegalski, Y. L. Li, A. Sharan, J. Schubert, R. Uecker, P. Reiche, Y. B. Chen, X. Q. Pan, V. Gopalan, L. Q. Chen, D. G. Schlom, and C. B. Eom, Science 306, 1005 (2004).
8. J. H. Haeni, P. Irvin, W. Chang, R. Uecker, P. Reiche, Y. L. Li, S. Choudhury, W. Tian, M. E. Hawley, B. Craigo, A. K. Tagantsev, X. Q. Pan, S. K. Streiffer, L. Q. Chen, S. W. Kirchoefer, J. Levy, and D. G. Schlom, Nature (London) 430, 758 (2005).
9. C. L. Canedy, H. Li, S. P. Alpay, L. Salamanca-Riba, A. L. Roytburd, and R. Ramesh, Appl. Phys. Lett. 77, 1695 (2000).
10. D. Y. Wang, Y. Wang, X. Y. Zhou, H. L. W. Chan, and C. L. Choy, Appl. Phys. Lett. 86, 212904 (2005).
11. Y. Wang, Y. L. Cheng, K. C. Cheng, H. L. W. Chan, and C. L. Choy, Appl. Phys. Lett. 85, 1580 (2004).
12. E. D. Specht, H. M. Christen, D. P. Norton, and L. A. Boatner, Phys. Rev. Lett. 80, 4317 (1998).
13. Ferroelectrics and Related Substances, Landolt-Börnstein, New Series, Group III, Vol. 36, edited by H. Landolt (Springer, Berlin, 2002), p. 416.
14. Note that in order to better compare the property versus lattice relationship in the thin film and ceramic, we have defined the tetragonality as the ratio of the lattice parameter along the direction of the electrical field for the dielectric/ferroelectric tests over the lattice parameter along the direction perpendicular to the electric field. Therefore the tetragonality of the thin film equals to a/c, while conventionally the tetragonality (for ceramics) is defined as ratio of c/a.
15. H. J. Gao, C. L. Chen, B. Rafferty, S. J. Pennycook, G. P. Luo, and C. W. Chu, Appl. Phys. Lett. 75, 2542 (1999).
16. N. Navi, H. Kim, J. S. Horwitz, H. D. Wu, and S. B. Qadri, Appl. Phys. A: Mater. Sci. Process. 76, 841 (2003).
17. W. J. Kim, W. Chang, S. B. Qadri, J. M. Pond, S. W. Kirchoefer, D. B. Chrisey, and J. S. Horwitz, Appl. Phys. Lett. 76, 1185 (2000).
18. W. Chang, J. S. Horwitz, A. C. Carter, J. M. Pond, S. W. Kirchoefer, C. M. Gilmore, and D. B. Chrisey, Appl. Phys. Lett. 74, 1033 (1999).
19. N. Yanase, K. Abe, N. Fukushima, and T. Kawakubo, Jpn. J. Appl. Phys., Part 1 38, 5305 (1999).
20. H. W. Chan, C. R. Yang, C. L. Fu, L. Zhao, and Z. Q. Gao, Appl. Surf. Sci. 252, 4171 (2006).
21. S. S. Gevorgian, T. Matinsson, P. L. J. Linner, and E. L. Kollberg, IEEE Trans. Microwave Theory Tech. 44, 896 (1996).