Study of Si wafer surfaces irradiated by gas cluster ion beams

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 257, Issue 1-2 SPEC. ISS., 2007, Pages 683-686

  Isogai, H ^a   Toyoda, E ^a   Senda, T ^a   Izunome, K ^a   Kashima, K ^a   Toyoda, N ^b   Yamada, I ^b  

^a Nissei Bldg   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

Author keywords

Anneal; Gas cluster ion beam; GCIB; Irradiation damage; Planarization; Si (1 0 0)

Indexed keywords

ATOMIC FORCE MICROSCOPY; ION BEAMS; SPUTTERING; SURFACE ROUGHNESS; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY;

GAS CLUSTER ION BEAM; GCIB; IRRADIATION DAMAGE; PLANARIZATION;

SILICON WAFERS;

EID: 33947697611     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.01.070     Document Type: Article

References (6)

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6. Toyoda N., Matsui S., and Yamada I. Jpn. J. Appl. Phys. 41 (2002) 4287