Interaction of SF6 cluster ion beams with Si surface

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 12 B, 2001, Pages

  Takaoka, Gikan H ^a   Nakamura, Shigeru ^a   Seki, Toshio ^a   Matsuo, Jiro ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Chemical etching; Cluster ion; Ion beam process; Mass spectrometry; Silicon surface

Indexed keywords

ION BEAMS; ION BOMBARDMENT; MASS SPECTROMETRY; MONOMERS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SPUTTERING; SULFUR COMPOUNDS;

QUADRUPOLE MASS SPECTROMETERS (QMS);

HIGH ENERGY PHYSICS;

EID: 0035894809     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l1384     Document Type: Article

References (12)