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Volumn 42, Issue 4, 2007, Pages 853-861

A configurable enhanced TTRAM macro for system-level power management unified memory

Author keywords

Capacitorless DRAM; Power management; SOI; System on chip; Unified memory

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POWER MEASUREMENT; MICROPROCESSOR CHIPS; TRANSISTORS; VOLTAGE CONTROL;

EID: 33947696724     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2007.891677     Document Type: Article
Times cited : (3)

References (12)
  • 1
    • 0027889264 scopus 로고
    • A capacitorless DRAM cell on SOI substrate
    • H. Wann and C. Hu, "A capacitorless DRAM cell on SOI substrate," in IEDM Tech. Dig., 1993, pp. 635-638.
    • (1993) IEDM Tech. Dig , pp. 635-638
    • Wann, H.1    Hu, C.2
  • 7
    • 33645751666 scopus 로고    scopus 로고
    • A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory
    • Apr
    • E. Yoshida and T. Tanaka, "A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory," IEICE Trans. Electron., vol. 53, no. 4, pp. 692-697, Apr. 2006.
    • (2006) IEICE Trans. Electron , vol.53 , Issue.4 , pp. 692-697
    • Yoshida, E.1    Tanaka, T.2
  • 10
    • 0026954430 scopus 로고
    • The enhancement of gate induced-drain leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain
    • Nov
    • J. Chen, F. Assaderaghi, P.-K. Ko, and C. Hu, "The enhancement of gate induced-drain leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain," IEEE Electron Device Lett., vol. 13, no. 11, pp. 572-574, Nov. 1992.
    • (1992) IEEE Electron Device Lett , vol.13 , Issue.11 , pp. 572-574
    • Chen, J.1    Assaderaghi, F.2    Ko, P.-K.3    Hu, C.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.