Facet-passivation processes for the improvement of Al-containing semiconductor laser diodes

Journal of Lightwave Technology

Volumn 24, Issue 2, 2006, Pages 956-961

  Lambert, Robert W ^a   Ayling, Tim ^b   Hendry, Alec F ^b   Carson, Joan M ^b   Barrow, David A ^b   McHendry, Stuart ^b   Scott, Crawford J ^b   McKee, Andrew ^b   Meredith, Wyn ^b  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

^b Kelvin Campus ^*  (United Kingdom)

Author keywords

AlGaAs; Laser reliability; Passivation; Rb frequency standard; Semiconductor lasers

Indexed keywords

MIRRORS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON NITRIDE;

ALGAAS; CATASTROPHIC OPTICAL DAMAGE (COD); CATASTROPHIC OPTICAL MIRROR DAMAGE (COMD) THRESHOLDS; LASER RELIABILITY; RB FREQUENCY STANDARD;

SEMICONDUCTOR LASERS;

EID: 33947681731     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2005.861916     Document Type: Article

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