Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001)

Journal of Applied Physics

Volumn 95, Issue 8, 2004, Pages 4219-4222

  Udeshi, Darshak ^a   Maldonado, Eduardo ^a   Xu, Yuqing ^b   Tao, Meng ^a   Kirk, Wiley P ^a  

^a University of Texas at Arlington   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; OHMIC CHARACTERISTICS; SCHOTTKY TRANSITIONS; SILICIDATION;

ACTIVATION ENERGY; ANNEALING; CAPACITANCE; DIMERS; FERMI LEVEL; INTERFACES (MATERIALS); INTERFACIAL ENERGY; MONOLAYERS; PASSIVATION; SELENIUM; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY; TITANIUM;

OHMIC CONTACTS;

EID: 2342463728     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1687047     Document Type: Article

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