Modification of n-Si(1 1 1) wafer with olefin carboxyl acids and olefin sulfite acids and the photovoltaic properties of the electrodes

Surface Science

Volumn 601, Issue 7, 2007, Pages 1709-1715

  Xu, Q H ^a   Zhao, Y X ^a   Huang, F ^b   Zhang, Z Q ^b   Wei, Y B ^a  

^a BEIJING UNIVERSITY OF CHEMICAL TECHNOLOGY   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

n Si(1 1 1) wafer; Photocurrent; Photovoltage; Radical initiated reaction; Semiconductor

Indexed keywords

CARBOXYLIC ACIDS; CHEMICAL BONDS; ELECTRODES; OLEFINS; PHOTOCURRENTS; X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON NUMBERS; PHOTOCURRENT DENSITY; PHOTOVOLTAGE; RADICAL INITIATED REACTION;

SILICON WAFERS;

EID: 33947596017     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.01.043     Document Type: Article

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