Comparison of hole and electron intersubband absorption strengths for quantum well infrared photodetectors

IEEE Transactions on Electron Devices

Volumn 47, Issue 7, 2000, Pages 1325-1329

  Pan, Janet L ^b   Fonstad Jr , Clifton G ^a,c  

^a IEEE

^b YALE UNIVERSITY   (United States)

^c USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DIFFRACTION GRATINGS; ELECTRON ABSORPTION; LIGHT POLARIZATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

CARRIER CONFINEMENT; ELECTRON INTERSUBBAND ABSORPTION; HOLE INTERSUBBAND ABSORPTION;

INFRARED DETECTORS;

EID: 0034227742     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.848272     Document Type: Article

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