Thermally induced stress hysteresis and co-efficient of thermal expansion changes in nanoporous SiO2

Journal of Physics D: Applied Physics

Volumn 40, Issue 7, 2007, Pages 2176-2182

  Soh, Martin T K ^a,c   Thurn, Jeremy ^b   Thomas III, J H ^c   Talghader, Joseph J ^d  

^a WOODSIDE ENERGY LTD   (Australia)

^b SEAGATE TECHNOLOGY   (United States)

^c UNIVERSITY OF MINNESOTA   (United States)

^d University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODEPOSITION; ELECTRON BEAMS; SILICA; STRESS ANALYSIS; THERMAL EXPANSION; THERMOMECHANICAL TREATMENT;

BOND ANGLE; ELECTRON BEAM DEPOSITION; STRAIN REDISTRIBUTIONS; STRESS HYSTERESIS;

NANOPORES;

EID: 33947358298     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/7/048     Document Type: Article

References (28)

1. Kern W, Schnable G L and Fisher A W 1976 CVD glass films for passivation of silicon devices: preparation, composition, and stress properties RCA Rev. 37 3-54
2. Pliskin W A 1977 Comparison of properties of dielectric films deposited by various methods J. Vac. Sci. Technol. 14 1064-81
3. Robles S, Yieh E and Nguyen B C 1995 Moisture resistance of plasma enhanced chemical vapor deposited oxides used for ultralarge scale integrated device applications J. Electrochem. Soc. 142 580-5
4. Thurn J and Cook R F 2002 Stress hysteresis during thermal cycling of plasma-enhanced chemical vapor deposited silicon oxide films J. Appl. Phys. 91 1988-92
5. Soh M T K, Nguyen T, Silva K K M B D, Westerhout R J, Antoszewski J, Keating A J, Savvides N, Musca C A, Dell J M and Faraone L 2005 Short-wavelength infrared tuneable filters on HgCdTe photoconductors Opt. Express 14 9683-94
6. Liu W and Talghader J J 2002 Thermally invariant dielectric coatings for micromirrors Appl. Opt. 41 3285-93
7. Soh M T K, Thomas J H III and Talghader J J 2006 Thermally induced structural changes in nanoporous silicon dioxide from x-ray photoelectron spectroscopy J. Vac. Sci. Technol. A: Vac. Surf. Films 24 2147-50
8. Stoney G G 1909 The tension of metallic films deposited by electrolysis Proc. R. Soc. Lond., Ser. A 82 172-5
9. Brantley W A 1973 Calculated elastic constants for stress problems associated with semiconductor devices J. Appl. Phys. 44 534-5
10. Oliver W C and Pharr G M 1992 An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments J. Mater. Res. 7 1564-83
11. Fischer-Cripps A C 2004 Nanoindentation (Mechanical Engineering Series) (New York: Springer)
12. Thurn J and Cook R F 2002 Simplified area function for sharp indenter tips in depth-sensing indentation J. Mater. Res. 17 1143-6
13. Fischer-Cripps A C 2006 Critical review of analysis and interpretation of nanoindentation test data Surf. Coat. Technol. 200 4153-65
14. Soh M T K, Fischer-Cripps A C, Savvides N, Musca C A and Faraone L 2006 Nanoindentation of plasma-deposited nitrogen-rich silicon nitride thin films J. Appl. Phys. 100 024310
15. Mecik J, Munz D, Quandt E, Weppelmann E R and Swain M V 1997 Determination of elastic modulus of thin layers using nanoindentation J. Mater. Res. 12 2475-84
16. Glazov V M and Pashinkin A S 2001 The thermophysical properties (heat capacity and thermal expansion) of single-crystal silicon High Temperature 39 413-9
17. Novak A 1974 Structure and Bonding vol 18 (Berlin: Springer) p 194
18. Chand N, Kola R R, Opila R L, Comizzoli R B, Krautter H, Sergent A M and Tsang W T 1995 Stress free and moisture insensitive silicon oxide dielectric films formed by molecular beam deposition J. Appl. Phys. 78 3315-22
19. Haque M S, Naseem H A and Brown W D 1997 Correlation of stress behavior with hydrogen-related impurities in plasma-enhanced chemical vapor deposited silicon dioxide films J. Appl. Phys. 82 2922-32
20. Theil J A, Tsu D V and Lucovsky G 1990 Reaction pathways and sources of OH groups in low temperature remote PECVD silicon dioxide thin films J. Electron. Mater. 19 209-17
21. Pulker H K 1984 Coatings on Glass (Amsterdam: Elsevier)
22. 7 compared with experimental values for silicates and siloxanes Phys. Chem. Minerals 6 221-46
23. Hofmann S and Thomas J H III 1983 An XPS study of the influence of ion sputtering on bonding in thermally grown silicon dioxide J. Vac. Sci. Technol. A: Vac. Surf. Films 1 43-7
24. Hamilton W C 1968 Hydrogen Bonding in Solids; Methods of Molecular Structure Determination (New York: Benjamin) chapter 3
25. Mozzi R L and Warren B E 1969 The structure of vitreous silica J. Appl. Crystallogr. 2 164-72
26. 2 deposited by remote plasma-enhanced chemical vapor deposition and incorporated by postdeposition exposure to water vapor J. Vac. Sci. Technol. A: Vac. Surf. Films 8 1374-81
27. Shintani A, Sugaki S and Nakashima H 1980 Temperature dependence of stresses in chemical vapor deposited vitreous films J. Appl. Phys. 51 4197-205
28. Thornton J A 1977 High rate thick film growth Ann. Rev. Mater. Sci. 7 239-60