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Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 805-808

Optical properties of p-type modulation-doped InAs quantum dot structures grown by molecular beam epitaxy

(4) Kumagai, N a Watanabe, K a Nakata, Y a Arakawa, Y a

a INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

Author keywords

A1. Modulation doping; A1. Photoluminescence; A1. Quantum dots; A3. MBE; B1. InAs

Indexed keywords

DOPING (ADDITIVES); EPITAXIAL GROWTH; FULL WIDTH AT HALF MAXIMUM; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY;

BERYLLIUM (BE) DIFFUSION; MODULATION DOPING; POSITIVE-TYPE MODULATION; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947331038 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.11.124 Document Type: Article

Times cited : (13)

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