GaMnAs grown on (0 0 1), (3 1 1) A and (1 1 0) GAaS substrates: Comparison of growth conditions and post-growth annealing behaviour

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 260-263

  Wurstbauer, Ursula ^a   Sperl, Matthias ^a   Schuh, Dieter ^a   Bayreuther, Günther ^a   Sadowski, Janusz ^a   Wegscheider, Werner ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

A3. Molecular beam epitaxy; B1. GaMnAs; B2. Semiconducting III IV materials; B3. Spintronic devices

Indexed keywords

ANNEALING; FERROMAGNETISM; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SUPERCONDUCTING TRANSITION TEMPERATURE; SURFACE DEFECTS;

ARSENIC CAPPING LAYER; FERROMAGNETIC TRANSITION TEMPERATURE; SEMICONDUCTING III-IV MATERIALS; SPINTRONIC DEVICES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33947329793     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.197     Document Type: Article

References (14)

1. Dietl T., Ohno H., and Matsukura F. Phys. Rev. B 63 (2005) 1995205
2. Wang K.Y., Edmonds K.W., Zhao L.X., Sawicki M., Campion R.P., Gallagher B.L., and Foxon C.T. Phys. Rev. B 72 (2005) 115207
3. Goennenwein S.T.B., Russo S., Morpurgo A.F., Klapwijk T.M., Van Roy W., and De Boeck J. Phys. Rev. B 71 (2005) 193306
4. Tang H.X., Kawakami R.K., Awschalom D.D., and Roukes M.L. Phys. Rev. Lett. 90 (2003) 167206
5. Reinwald M., Wurstbauer U., Döppe M., Kipferl W., Wagenhuber K., Tranitz H.-P., Weiss D., and Wegscheider W. J. Crystal Growth 278 (2005) 690
6. Bihler C., Huebl H., Brandt M.S., Goennenwein S.T.B., Reinwald M., Wurstbauer U., Döppe M., Weiss D., and Wegscheider W. Appl. Phys. Lett. 89 (2006) 012507
7. Omyia T., Matsukura F., Shen S., Ohno Y., and Ohno H. Physica E 10 (2001) 206
8. Sawicki M., Wang K.-Y., Edmonds K.W., Campion R.P., Staddon C.R., Farley N.R.S., Foxon C.T., Papis E., Kaminska E., Piotrowska A., Dietl T., and Gallagher B.L. Phys. Rev. B 71 (2005) 121302
9. Edmonds K.W., Boguslawski P., Wang K.Y., Campion R.P., Novikov S.N., Farley N.R.S., Gallagher B.L., Foxon C.T., Sawicki M., Dietl T., Buongiorno Nardelli M., and Bernholc J. Phys. Rev. Lett. 92 3 (2004) 037201
10. Chiba D., Takamura K., Matsukura F., and Ohno H. Appl. Phys. Lett. 82 (2003) 3020
11. Adell M., Ilver L., Kanski J., Stanciu V., Svedlindh P., Sadowski J., Domagala J.Z., Terki F., Hernandez C., and Charar S. Appl. Phys. Lett. 86 (2005) 1112501
12. J. Sadowski, J.Z. Domagala, V. Osinniy, J. Kanski, M. Adell, L. Ilver, C. Hernandez, F. Terki, S. Charar, D. Maude, cond-mat/0601623.
13. Gerl C., Schmult S., Wurstbauer U., Tranitz H.-P., Mitzkus C., and Wegscheider W. Physika E 32 (2006) 258
14. Jungwith T., Masek J., Sinova J., and Macdonald A.H. Phys. Rev. B 68 (2003) 161202