Carbon-doped high-mobility hole gases on (0 0 1) and (1 1 0) GaAs

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 258-261

  Gerl, C ^a   Schmult, S ^a   Wurstbauer, U ^a   Tranitz, H P ^a   Mitzkus, C ^a   Wegscheider, W ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

Carbon; GaAs; Holes; MDSI; Quantum well; Rashba effect; Spin splitting; Two dimensional

Indexed keywords

CARBON; CARRIER MOBILITY; CRYSTALS; DIFFUSION; INTERFACES (MATERIALS); SEMICONDUCTOR QUANTUM WELLS; SURFACE STRUCTURE; TWO DIMENSIONAL;

HOLES; MDSI; RASHBA EFFECT; SPIN SPLITTING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33646167028     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.049     Document Type: Article

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