Thickness dependence of parallel and perpendicular anisotropic resistivity in Ta/NiFe/IrMn/Ta multilayer studied by anisotropic magnetoresistance and planar Hall effect

Journal of Applied Physics

Volumn 101, Issue 5, 2007, Pages

  Kim, Cheolgi ^a   Thanh, N T ^a,b   Tu, L T ^a   Ha, N D ^a   Kim, C O ^a   Shin, K H ^b   Parvatheeswara Rao, B ^c,d  

^a Chungnam National University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c ANDHRA UNIVERSITY   (India)

^d CNU ^*  (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; HALL EFFECT; MAGNETORESISTANCE; NICKEL COMPOUNDS; TANTALUM; TRANSITION METALS;

ANISOTROPIC MAGNETORESISTIVITIES; ANISOTROPIC RESISTIVITY CHANGES; PERPENDICULAR ANISOTROPIC RESISTIVITY; PLANAR HALL EFFECTS;

MULTILAYERS;

EID: 33947319152     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2435816     Document Type: Article

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