Thickness dependence of exchange anisotropy in NiFe/IrMn bilayers studied by Planar Hall Effect

Journal of Magnetism and Magnetic Materials

Volumn 305, Issue 2, 2006, Pages 432-435

  Thanh, N T ^a,b   Chun, M G ^b   Ha, N D ^a   Kim, K Y ^b   Kim, C O ^a   Kim, C G ^a  

^a Chungnam National University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

AMR; Exchange biased coupling; Planar Hall Effect

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; HALL EFFECT; MAGNETIC FIELDS; PARAMETER ESTIMATION;

AMR; EXCHANGE BIASED-COUPLING; PLANAR HALL EFFECT;

ANISOTROPY;

EID: 33747782880     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2006.01.228     Document Type: Article

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