Fabrication of lateral lattice-polarity-inverted GaN heterostructure

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 447-451

  Katayama, Ryuji ^a   Kuge, Yoshihiro ^a   Kondo, Takashi ^a   Onabe, Kentaro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. Kelvin force microscopy; A1. Lattice polarity; A1. Raman scattering; A3. RF MBE; B1. Nitrides

Indexed keywords

CRYSTAL STRUCTURE; ETCHING; MOLECULAR BEAM EPITAXY; NITRIDES; RAMAN SCATTERING; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS;

KELVIN FORCE MICROSCOPY; LATTICE POLARITY; PIEZOELECTRIC POLARIZATIONS;

HETEROJUNCTIONS;

EID: 33947313153     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.182     Document Type: Article

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