Effect of strain anisotropies on RHEED patterns of quantum dots

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 793-796

  Feltrin, A ^a   Freundlich, A ^a  

^a UNIVERSITY OF HOUSTON   (United States)

Author keywords

A1. Computer simulation; A1. Reflection high energy electron diffraction; B2. Atomistic strain; B2. Quantum dots; B2. Semiconducting III V materials

Indexed keywords

ELASTICITY; HIGH ENERGY ELECTRON DIFFRACTION; INVERSE KINEMATICS; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN RELAXATION;

ATOMISTIC ELASTICITY; ATOMISTIC STRAIN; SEMICONDUCTING III-V MATERIALS; STRANSKI-KRASTANOV QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947312467     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.202     Document Type: Article

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