Feasibility study of a semiconductor quantum bit structure based on a spin FET embedded with self-assembled InAs quantum dots

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 785-788

  Kashiwada, Saori ^a   Matsuda, Takashi ^a   Yoh, Kanji ^a,b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Qubit; A1. Single electron charging; A3. Self assembled InAs quantum dot

Indexed keywords

FIELD EFFECT TRANSISTORS; QUANTUM COMPUTERS; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SPIN POLARIZATION;

CHANNEL CONDUCTANCE; QUANTUM BIT STRUCTURE; QUBITS; SINGLE ELECTRON CHARGING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947312461     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.174     Document Type: Article

References (11)

1. Yoh K., Yuasa K., and Nakazato H. Physica E 29 (2005) 674
2. Lu W., Ji Z., Pfeiffer L., West K.W., and Rimberg A.J. Nature 423 (2003) 422
3. Petta J.R., Johnson A.C., Taylor J.M., laird E.A., Yacoby A., Lukin M.D., Marcus C.M., Hanson M.P., and Gossard A.C. Science 309 (2005) 2180
4. van der Wiel W.G., Stopa M., Kodera T., Hatano T., and Tarucha S. New J. Phys. 8 (2006) 28
5. Van de Walle C.G. Phys. Rev. B 39 (1989) 1871
6. Itoh S., Muto S., Ebiko Y., Sasakura H., and Shiramine K. Jpn. J. Appl. Phys. 38 (1999) L917
7. Tackeuchi A., Kuroda T., Nakata Y., Murayama M., Kitamura T., and Yokoyama N. Jpn. J. Appl. Phys. 42 (2003) 4278
8. Yoh K., Konda J., Shiina S., and Nishiguchi N. Jpn. J. Appl. Phys. 36 (1997) 4134
9. Langbein W., Borri P., Woggon U., Stavarache V., Reuter D., and Wieck A.D. Phys. Rev. B 70 (2004) 33301
10. Nakaoka T., Saito T., Tatebayashi J., and Arakawa Y. Phys. Rev. B 70 (2004) 235337
11. Schubert Ed. E.F. Delta-doping of Semiconductors (1996), Cambridge University Press, New York p. 414