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Volumn 301-302, Issue SPEC. ISS., 2007, Pages 1021-1024
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Fabrication and characterization of C60 FET using highly c-axis oriented poly-crystalline AlN insulator film
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Author keywords
A1. Atomic force microscope; A1. Electrical transport; A3. Molecular beam epitaxy; B1. Fullerenes; B2. Aluminum nitride
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Indexed keywords
ALUMINUM COMPOUNDS;
ATOMIC FORCE MICROSCOPY;
FIELD EFFECT TRANSISTORS;
FULLERENES;
MOLECULAR BEAM EPITAXY;
POLYCRYSTALLINE MATERIALS;
C-AXIS ORIENTATION;
CARRIER INJECTION;
ELECTRICAL TRANSPORT;
METALLIC FILMS;
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EID: 33947303828
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.11.310 Document Type: Article |
Times cited : (2)
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References (10)
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