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Volumn 301-302, Issue SPEC. ISS., 2007, Pages 1021-1024

Fabrication and characterization of C60 FET using highly c-axis oriented poly-crystalline AlN insulator film

Author keywords

A1. Atomic force microscope; A1. Electrical transport; A3. Molecular beam epitaxy; B1. Fullerenes; B2. Aluminum nitride

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; FIELD EFFECT TRANSISTORS; FULLERENES; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS;

EID: 33947303828     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.310     Document Type: Article
Times cited : (2)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.