Solid C60 layer growth on AlN (0001) surface for C60 FET structure by MBE

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2404-2407

  Yokoyama, D ^a   Nojiri, H ^a   Yamamoto, A ^a   Hashimoto, A ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; DEVICE APPLICATION; EPITAXIAL ALN; FACE-CENTRED CUBIC; FIELD-EFFECT DOPING; LAYER GROWTH; SOLID C;

EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; NITRIDES; SEMICONDUCTOR DOPING;

ALUMINUM NITRIDE;

EID: 84875097659     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303352     Document Type: Conference Paper

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