Strain compensation for InGaAs-AlAs-AlAsSb coupled double quantum wells by controlling the barrier layer composition

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 240-243

  Nagase, Masanori ^a   Mozume, Teruo ^a   Simoyama, Takasi ^a   Hasama, Toshifumi ^a   Ishikawa, Hiroshi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A1. Strain compensation; A3. Coupled double quantum wells; A3. Molecular beam epitaxy; B2. InGaAs AlAs AlAsSb; B3. Intersubband transition

Indexed keywords

ALUMINUM ARSENIDE; LATTICE MISMATCH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN MEASUREMENT;

BARRIER LAYER COMPOSITION; COUPLED DOUBLE QUANTUM WELLS (CDQW); INTER SUBBAND TRANSITIONS; STRAIN COMPENSATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33947302399     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.089     Document Type: Article

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