Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 183-187

  Kasai, J ^a   Mozume, T ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

A1. Diffusion stopping layer; A1. Intersubband transition; A3. Molecular beam epitaxy; A3. Single quantum well; B1. InGaAs AlAsSb

Indexed keywords

ALUMINUM; CRYSTAL GROWTH; DIFFUSION; MOLECULAR BEAM EPITAXY; MONOLAYERS; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM; X RAY DIFFRACTION;

A3; DIFFUSION STOPPING LAYER; INGAAS/ALASSB; INTERSUBBAND TRANSITIONS; SINGLE QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 18444381201     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.074     Document Type: Conference Paper

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