Enhanced optical and electrical characteristics of Si detectors integrated with periodic 1-D and 2-D semiconductor nanoscale structures

Proceedings of the IEEE Conference on Nanotechnology

Volumn 2001-January, Issue , 2001, Pages 368-373

  Sharma, A K ^a   Zaidi, S H ^b   Liecthy, G ^a   Brueck, S R J ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b Gratings Incorporated   (United States)

^c UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE ABSORPTION; LIGHT ABSORPTION; NANOSTRUCTURES; NANOTECHNOLOGY; PHOTODETECTORS; SEMICONDUCTING SILICON; SILICON;

ELECTRICAL CHARACTERISTIC; GRATING STRUCTURES; INTERNAL QUANTUM EFFICIENCY; NANO-STRUCTURING; NANOSCALE STRUCTURE; PHOTODETECTORS (PDS); SURFACE REFLECTIONS; TRANSMISSION PROPERTY;

PERIODIC STRUCTURES;

EID: 33947144969     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2001.966450     Document Type: Conference Paper

References (20)

1. P. N. J. Dennis, Photodetectors: An introduction to Current Technology, Plenum Press, 1985.
2. M. Ghioni, F. Zappa, V. P. Kesan, and J. Warnock, "A VLSI-compatible high-speed silicon photodetector for optical data link applications, "IEEE Trans. Elect. Dev., ED-43, pp. 1054-1060, 1996.
3. J. S. Wang, C. G. Shih, W. H. Chang, J. R. Middleton, P. A. Apostolakis, and M. Feng, "11 GHz bandwidth optical integrated revcievers using GaAs MESFET and MSM technology", IEEE Photon. Tech, Lett. 5, pp. 316-318, 1993.
4. A. Sayles and J. Uyemura, "An optoelectronic CMOS memory circuit for parallel detection and storage of optical data", IEEE J. Solid State Circuits, Sc-23, pp. 1110-1115, 1991.
5. B. W. Mullins, S. F. Soares, K. A. McArdle, C. Wilson, and S. R. J. Brueck, "A simple high-speed Si Schottky diode", IEEE Photon. Tech. Lett. 3, pp. 360-362, 1991.
6. S. Alexandrou, C. Wang, T. Hsiang, M. Y. Liu, and S. Y. Chou, "A 75 GHz silicon metal-semiconductormetal Schottky photodiode", Appl. Phys. Lett. 62, pp. 2507-2509, 1994.
7. Y. L. Ho and k. S. Wong, "Bandwidth enhancement in Si metal-semiconductor-metal photodetectors by trench formation", IEEE Photon. Tech. Lett. 8, pp. 1064-1066 (1996).
8. Li-Hong Laih, Tien-Chang Chang, Yen-Ann Chen, Wen-Chin Tsay, and Jsy-Wong Hong, "Characteristics of MSM photodiodes with trench electrodes on p-type Si wafer", IEEE Trans. Elect. Dev., ED-45, pp. 2018-2023, 1998.
9. M. Y. Liu, E. Chen, and S. Y. Chou, "140 GHz metal-semiconductor-metal photodetectors on siliconon-insulator substrate with a scaled layer", Appl. Phys. Lett. 65, pp. 887-888, 1994.
10. H. C. Lee and Bart Van Zeghbroeck, "A novel high-speed silicon MSM photodetector operating at 830 nm wavelength", IEEE Trans. Elect. Dev., ED-16, pp. 175-177, 1995.
11. M. G. Moharam and T. K. Gaylord, J. Opt. Soc. Amer. 71, 818 (1981).
12. Saleem H. Zaidi, S. R. J. Brueck, F. M. Schellenberg, R. S. Mackay, K. Uekert, and J. J. Persoff, "Interferometric lithography exposure tool for 180-nm structures", SPIE 3048, pp. 248-254, 1997.
13. L. F. Johnson, G. W. Kammlott, and K. A. Ingersoll, "Generation of periodic surface corrugations", Appl. Opt. 17, pp. 1165-1181, 1978.
14. Saleem H. Zaidi and S. R. J. Brueck, Multiple exposure interferometric lithography", J. Vac. Sci. Technol. B 11, 658, 1993.
15. Saleem H. Zaidi, S. R. J. Brueck, T. Hill and R. N. Shagam, "Mix and match interferometric and optical lithographies fornanoscale structuring", SPIE-3331, 406, 1988.
16. S. Wolf and S. N. Tauber, "Silicon Processing", vol-1., Lattice Press.
17. th workshop on c-Si Mat., and Proc, Breckenridge (1999).
18. Grating Solver Development Company, P. O. Box 353, Allen, TX 75013.
19. Laurence W. Cahill, "Modeling of MSM Photodetectors", SPIE, Vol. 3629, pp. 453-460, Jan. 1999.
20. L. W. Cahill, "Techniques for the design and simulation of interdigitated MSM photodetectors", Proceedings of SPIE, Vol. 2999, pp. 79-85, Feb. 1997.